TLP290-4(GB,E) Description

The Toshiba TLP290-4(GB, E) consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP290-4(GB, E) is housed in the SO16 package, a very small and thin coupler. Since TLP290-4(GB, E) is guaranteed wide operating temperatures (Ta=-55 to 110˚C), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. 

TLP290-4(GB,E) Features

Collector-Emitter Voltage: 80 V (min)

Current Transfer Ratio: 50% (min)

   Rank GB: 100% (min)

Isolation Voltage: 2500 Vrms (min)

Guaranteed performance over -55 to 110 ˚C

UL (under preparation): UL1577, File No. E67349

UL (under preparation): CSA Component Acceptance Service

TLP290-4(GB,E) Applications

Automotive

Infotainment & cluster 

Communications equipment 

Wireless infrastructure 

Industrial 

Lighting