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TLP292(GR-TPL,E

TLP292(GR-TPL,E

TLP292(GR-TPL,E

Toshiba Semiconductor and Storage

TLP292(GR-TPL,E datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TLP292(GR-TPL,E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SOIC (0.179, 4.55mm Width)
Number of Pins 4
Operating Temperature -55°C~125°C
Packaging Tape & Reel (TR)
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Voltage - Isolation 3750Vrms
Output Type Transistor
Number of Elements 1
Configuration SINGLE
Number of Channels 1
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type AC, DC
Turn On Delay Time 3 μs
Forward Current 10mA
Max Output Voltage 80V
Output Current per Channel 50mA
Turn-Off Delay Time 3 μs
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50mA
Rise / Fall Time (Typ) 2μs 3μs
Max Input Current 50mA
Collector Emitter Saturation Voltage 300mV
Current Transfer Ratio (Min) 100% @ 5mA
Current Transfer Ratio (Max) 300% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Max Junction Temperature (Tj) 135°C
Ambient Temperature Range High 125°C
Dark Current-Max 50000nA
Height 2.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.14520 $0.2904

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