TLP3409S(TP,E datasheet pdf and Solid State Relays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TLP3409S(TP,E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
4-SMD (0.079, 2.00mm)
Packaging
Tape & Reel (TR)
Published
2017
Series
TLP3409S
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
HTS Code
8541.40.95.00
Reach Compliance Code
unknown
Termination Style
SMD (SMT) Tab
Output Type
AC, DC
Circuit
SPST-NO (1 Form A)
Voltage - Input
1.27VDC
Optoelectronic Device Type
TRANSISTOR OUTPUT SSR
Voltage - Load
0V~100V
On-State Resistance (Max)
600mOhm
Load Current
650mA
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$2.44035
$4.8807
TLP3409S(TP,E Product Details
TLP3409S(TP,E Description
A photo MOSFET is optically connected to an infrared light emitting diode to create the TLP3409S photorelay. It comes packaged in an S-VSON4 container. The TLP3409S is perfect for switching applications in high-speed testers because it has a very low on-resistance and on/off switching of current up to 0.65 A.
TLP3409S Features
S-VSON4: height = 1.75 mm (max), area = 1.45 mm × 2.0 mm (typ.)