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TPC6107(TE85L,F,M)

TPC6107(TE85L,F,M)

TPC6107(TE85L,F,M)

Toshiba Semiconductor and Storage

Trans MOSFET P-CH 20V 4.5A 6-Pin VS T/R

SOT-23

TPC6107(TE85L,F,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package VS-6 (2.9x2.8)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIV
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
Power Dissipation 2.2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 55mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 5V
Rise Time 145ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 92 ns
Turn-Off Delay Time 142 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Input Capacitance 680pF
Drain to Source Resistance 55mOhm
Rds On Max 55 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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