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TPC8062-H,LQ(CM

TPC8062-H,LQ(CM

TPC8062-H,LQ(CM

Toshiba Semiconductor and Storage

Trans MOSFET N-CH 30V 18A 8-Pin SOP

SOT-23

TPC8062-H,LQ(CM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.7 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.9nF
Rds On Max 5.8 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.82040 $2.4612

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