TPC8115(TE12L,Q,M)

new-10%

Manufacturer part number:TPC8115(TE12L,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 20V 10A SOP8 2-6J1B

Case Package:SOT-23

Datasheet:TPC8115(TE12L,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173, 4.40mm Width)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSIV
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1W Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	9130pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	115nC @ 5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V