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TPCP8103-H(TE85LFM

TPCP8103-H(TE85LFM

TPCP8103-H(TE85LFM

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 4.8A PS-8

SOT-23

TPCP8103-H(TE85LFM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 840mW Ta
Turn On Delay Time 6.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status RoHS Compliant

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