TPH2900ENH,L1Q

new-10%

Manufacturer part number:TPH2900ENH,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 200V 33A SOP8

Case Package:SOT-23

Datasheet:TPH2900ENH,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	78W Tc
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	29m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	33A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
RoHS Status	RoHS Compliant