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TPH3206LSGB

TPH3206LSGB

TPH3206LSGB

Transphorm

GaNFET (Gallium Nitride) N-Channel 180m Ω @ 10A, 8V ±18V 720pF @ 480V 6.2nC @ 4.5V 650V 3-PowerDFN

SOT-23

TPH3206LSGB Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 3-PowerDFN
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 81W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 480V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs (Max) ±18V
TPH3206LSGB Product Details

TPH3206LSGB Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 720pF @ 480V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (8V) reduces this device's overall power consumption.

TPH3206LSGB Features


a 650V drain to source voltage (Vdss)


TPH3206LSGB Applications


There are a lot of Transphorm
TPH3206LSGB applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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