2N2222AUBTXV Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 1mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 15mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 800mA volts.
2N2222AUBTXV Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
2N2222AUBTXV Applications
There are a lot of TT Electronics/Optek Technology 2N2222AUBTXV applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
