OPB816Z datasheet pdf and Optical Sensors - Photointerrupters - Slot Type - Transistor Output product details from TT Electronics/Optek Technology stock available on our website
SOT-23
OPB816Z Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Chassis Mount, Panel, Screw
Mounting Type
Chassis Mount
Package / Case
Module, Pre-Wired
Number of Pins
4
Operating Temperature
-40°C~85°C
Packaging
Bulk
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Lead Wire
Type
Unamplified
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Operating Supply Voltage
1.8V
Number of Elements
1
Output Configuration
Phototransistor
Power Dissipation
100mW
Output Current
30mA
Forward Current
50mA
Forward Voltage
1.8V
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
30mA
Sensing Distance
0.200 (5.08mm)
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Reverse Breakdown Voltage
2V
Wavelength
890 nm
Sensing Method
Through-Beam
Max Breakdown Voltage
30V
Current - DC Forward (If) (Max)
50mA
Touchscreen
Infrared (IR)
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.88000
$3.88
100
$3.73000
$373
250
$3.58000
$895
500
$3.45002
$1725.01
OPB816Z Product Details
OPB816Z Description
The OPB816Z slotted switch consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching off the phototransistor occurs whenever an opaque object passes through the slot.
The OPB816Z has an 0.61” (15.5 mm) deep slot allowing for a longer reach of the optical center line from the mounting plane. The phototransistor internal apertures are 0.010” x 0.06” (0.25 mm x 1.52 mm) on the sensor side (“S”) and 0.05” x 0.06” (1.27 mm x 1.52 mm) on the emitter side (“E”).
OPB816Z Features
0.20" (5.1 mm) wide gap, 0.61" (15.5 mm) deep slot