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D1210UK

D1210UK

D1210UK

TT Electronics / Semelab

D1210UK datasheet pdf and Transistors - FETs, MOSFETs - RF product details from TT Electronics / Semelab stock available on our website

SOT-23

D1210UK Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Material Si
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology DMOS
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 7
Maximum VSWR 20
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 1000
Maximum IDSS (uA) 1000
Typical Input Capacitance @ Vds (pF) 60(Max)@0V
Typical Reverse Transfer Capacitance @ Vds (pF) 4(Max)@12.5V
Typical Output Capacitance @ Vds (pF) 40(Max)@12.5V
Typical Forward Transconductance (S) 0.8(Min)
Maximum Power Dissipation (mW) 50000
Output Power (W) 10
Typical Power Gain (dB) 10(Min)
Maximum Frequency (MHz) 175
Minimum Frequency (MHz) 1
Typical Drain Efficiency (%) 50(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
AEC Qualified No
Standard Package Name Case DA
Supplier Package Case DA
Military No
Mounting Screw
Package Height 6.6
Package Length 24.76
Package Width 9.52
PCB changed 4
Part Status Obsolete
Pin Count 4
Configuration Single Dual Source
Channel Type N
RoHS Status RoHS Compliant

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