50MT060WHTAPBF

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50MT060WHTAPBF

Manufacturer part number:50MT060WHTAPBF

Manufacturer:Vishay

Description:50MT060WHTAPBF datasheet pdf and Transistors - IGBTs - Modules product details from Vishay stock available on our website

Case Package:SOT-23

Datasheet:50MT060WHTAPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks, 1 Day
Mount	Screw, Through Hole
Surface Mount	NO
Number of Pins	12
Number of Terminals	7
Transistor Element Material	SILICON
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	600
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	658000
Maximum Continuous Collector Current (A)	114
Maximum Gate Emitter Leakage Current (uA)	0.25
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	MTP
Military	No
Mounting	Screw
Package Height	16
Package Length	63.5
Package Width	33
PCB changed	10
Approvals	UL
Manufacturer	Vishay
RoHS	Yes
Package Shape	RECTANGULAR
Pbfree Code	Yes
Part Status	Obsolete
ECCN Code	EAR99
Type	Dual
Max Operating Temperature	150 °C
Min Operating Temperature	-40 °C
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	10
JESD-30 Code	R-XUFM-X7
Qualification Status	Not Qualified
Max Output Current	114 A
Number of Elements	2
Configuration	Dual
Max Supply Voltage	600 V
Element Configuration	Dual
Power Dissipation	658 W
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600 V
Max Collector Current	114 A
Channel Type	N
Power Dissipation-Max (Abs)	658 W
Collector Current-Max (IC)	114 A
Collector-Emitter Voltage-Max	600 V
Gate-Emitter Voltage-Max	20 V
Width	33 mm
Height	16 mm
Length	63.5 mm
Height (mm)	20.5 mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free