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BA779V-GH-08

BA779V-GH-08

BA779V-GH-08

Vishay

PIN DIODE SILICON 260 DUAL Tape and Reel

SOT-23

BA779V-GH-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Surface MountYES
Number of Pins 3
Diode Element Material SILICON
Number of Terminals 3
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum Reverse Voltage (V) 30
Maximum Forward Current (mA) 50
Maximum Forward Voltage (V) 1@20mA
Maximum Series Resistance @ Maximum IF (Ohm) [email protected]
Maximum Diode Capacitance (pF) 0.5@0V
Typical Carrier Life Time (us) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
AEC Qualified Number AEC-Q101
Standard Package Name SOT
Supplier Package SOT-23
Military No
Mounting Surface Mount
Package Height 1.05(Max)
Package Length 3.1(Max)
Package Width 1.43(Max)
PCB changed 3
Lead Shape Gull-wing
RoHS Compliant
Package Shape RECTANGULAR
Manufacturer Vishay Semiconductors
PackagingTape and Reel
JESD-609 Code e3
Part StatusObsolete
ECCN Code EAR99
Type Attenuator
Terminal Finish Matte Tin (Sn)
Max Operating Temperature125 °C
Min Operating Temperature -55 °C
HTS Code8541.10.00.80
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Element ConfigurationSingle
Diode Type PIN DIODE
Forward Current50 mA
Application ATTENUATOR
Forward Voltage1 V
Reverse Voltage30 V
Frequency RangeUHF|VHF|HF
Breakdown Voltage-Min 30 V
Reverse Voltage (DC) 30 V
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Nom 0.5 pF
Diode Capacitance-Max 0.5 pF
Minority Carrier Lifetime-Nom 4 µs
Diode Res Test Current 1.5 mA
Diode Res Test Frequency 100 MHz
Diode Forward Resistance-Max 50 Ω
RoHS StatusRoHS Compliant
Radiation HardeningNo
In-Stock:1006 items

BA779V-GH-08 Product Details

BA779V-GH-08 Overview


There is a maximum reverse voltage that this device can consume which is around 30.RF diode is recommended to keep the forward voltage of the system above 1 V.Occasionally, this device may run at its lowest possible breakdown voltage of 30 V.

BA779V-GH-08 Features


at its lowest breakdown voltage of 30 V


BA779V-GH-08 Applications


There are a lot of Vishay
BA779V-GH-08 applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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