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SI4559EY-T1-GE3

SI4559EY-T1-GE3

SI4559EY-T1-GE3

VISHAY INTERTECHNOLOGY INC

SI4559EY-T1-GE3 datasheet pdf and Unclassified product details from VISHAY INTERTECHNOLOGY INC stock available on our website

SOT-23

SI4559EY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 8
Transistor Element Material SILICON
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Operating Temperature (Max) 175°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.4W
RoHS Status RoHS Compliant

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