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1N4006E-E3/54

1N4006E-E3/54

1N4006E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

SOT-23

1N4006E-E3/54 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Base Part Number 1N4006
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 45A
Voltage - DC Reverse (Vr) (Max) 800V
Current - Average Rectified (Io) 1A
Max Reverse Voltage (DC) 800V
Average Rectified Current 1A
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 800V
Capacitance @ Vr, F 15pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 45A
Reverse Voltage 800V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
5,500 $0.05486 $0.2743
11,000 $0.04748 $0.52228
27,500 $0.04502 $1.21554
55,000 $0.04256 $2.3408
137,500 $0.04010 $5.4937

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