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20ETF10S

20ETF10S

20ETF10S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A D2PAK

SOT-23

20ETF10S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
PackagingTube
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Base Part Number 20ETF10
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.31V @ 20A
Operating Temperature - Junction -40°C~150°C
Max Surge Current355A
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 20A
Forward Voltage1.31V
Max Reverse Voltage (DC) 1kV
Average Rectified Current20A
Reverse Recovery Time 400 ns
Peak Reverse Current100μA
Peak Non-Repetitive Surge Current 355A
Reverse Voltage1kV
Recovery Time 400 ns
RoHS StatusNon-RoHS Compliant
In-Stock:4873 items

About 20ETF10S

The 20ETF10S from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 1KV 20A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 20ETF10S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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