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80EPF12

80EPF12

80EPF12

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 80A TO247AC

SOT-23

80EPF12 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
PackagingTube
Published 2008
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Voltage - Rated DC 1.2kV
Current Rating80A
Polarity Standard
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 1200V
Output Current80A
Voltage - Forward (Vf) (Max) @ If 1.35V @ 80A
Operating Temperature - Junction -65°C~175°C
Max Surge Current1.1kA
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 80A
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current80A
Reverse Recovery Time 480 ns
Peak Reverse Current100μA
Reverse Voltage1.2kV
Recovery Time 480 ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2579 items

About 80EPF12

The 80EPF12 from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 1.2KV 80A TO247AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 80EPF12, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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