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BA783-HG3-18

BA783-HG3-18

BA783-HG3-18

Vishay Semiconductor Diodes Division

BA783-HG3-18 datasheet pdf and Diodes - RF product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

BA783-HG3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOD-123
Surface Mount YES
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.10.00.60
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G2
Number of Elements 1
Max Current Rating 100mA
Element Configuration Single
Diode Type PIN - Single
Forward Current 100mA
Output Current-Max 0.1A
Forward Voltage 1V
Peak Reverse Current 50nA
Capacitance @ Vr, F 1.2pF @ 3V 1MHz
Voltage - Peak Reverse (Max) 35V
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 1.2Ohm @ 3mA 1GHz
Diode Capacitance-Max 1.2pF
RoHS Status ROHS3 Compliant
BA783-HG3-18 Product Details

BA783-HG3-18 Overview


RF diode is recommended that the system's forward voltage is kept above 1V.The maximum peak reverse voltage for this device is 35V, according to the applicable device specifications.This device can measure a maximum output voltage of 0.1A.

BA783-HG3-18 Features


a maximum output current voltage of 0.1A

BA783-HG3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division BA783-HG3-18 applications of RF diodes.

  • Laptop and desktop PCs
  • Low loss band-switching in VHF television tuners
  • Car radio
  • Clamping circuits
  • Wearables
  • Receiver protectors
  • Compensators
  • Telematic systems
  • Set-top boxes, digital media players
  • General-purpose Voltage Controlled Attenuators for high linearity applications

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