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BA783S-E3-08

  • BA783S-E3-08
  • BA783S-E3-08

BA783S-E3-08

BA783S-E3-08

Vishay Semiconductor Diodes Division

PIN - Single 1.2pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

SOT-23

BA783S-E3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SC-76, SOD-323
Surface Mount YES
Diode Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.60
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Diode Type PIN - Single
Current - Max 100mA
Capacitance @ Vr, F 1.2pF @ 3V 1MHz
Voltage - Peak Reverse (Max) 35V
Frequency Band ULTRA HIGH FREQUENCY
Resistance @ If, F 1.2Ohm @ 3mA 1GHz
Diode Capacitance-Max 1.2pF
RoHS Status ROHS3 Compliant
BA783S-E3-08 Product Details

BA783S-E3-08 Overview


This device is designed to operate from the maximal current of 100mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 35V.

BA783S-E3-08 Features


from a maximum current of 100mA volts


BA783S-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BA783S-E3-08 applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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