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BA979S-GS18

BA979S-GS18

BA979S-GS18

Vishay Semiconductor Diodes Division

BA979S-GS18 datasheet pdf and Diodes - RF product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

BA979S-GS18 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Contact Plating Silver, Tin
Mount Surface Mount
Package / Case SOD-80 Variant
Number of Pins 2
Diode Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver (Sn/Ag)
HTS Code 8541.10.00.80
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 250
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Max Current Rating 50mA
Element Configuration Single
Diode Type PIN - Single
Case Connection ISOLATED
Forward Current 50mA
Application ATTENUATOR
Forward Voltage 1V
Capacitance @ Vr, F 0.5pF @ 0V 100MHz
Reverse Voltage 30V
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 50Ohm @ 1.5mA 100MHz
Diode Capacitance-Max 0.5pF
Minority Carrier Lifetime-Nom 4 μs
RoHS Status ROHS3 Compliant
BA979S-GS18 Product Details

BA979S-GS18 Overview


RF diode is recommended that the system's forward voltage is kept above 1V.

BA979S-GS18 Features



BA979S-GS18 Applications


There are a lot of Vishay Semiconductor Diodes Division BA979S-GS18 applications of RF diodes.

  • Car radio
  • Low diode capacitance
  • UHF mixer
  • Surface-mount band-switching circuits
  • General-purpose Voltage Controlled Attenuators for high linearity applications
  • Phase detection
  • Laptop and desktop PCs
  • Radar systems for industrial use
  • Sampling circuits
  • Two elements in series configuration in a small-sized plastic SMD package

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