BAS70-06-V-GS18 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
BAS70-06-V-GS18 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.70
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
BAS70-06
Pin Count
3
Number of Elements
2
Element Configuration
Common Anode
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
100nA @ 50V
Power Dissipation
200mW
Voltage - Forward (Vf) (Max) @ If
410mV @ 1mA
Forward Current
200mA
Max Reverse Leakage Current
100nA
Operating Temperature - Junction
125°C Max
Max Surge Current
600mA
Output Current-Max
0.2A
Current - Average Rectified (Io)
200mA DC
Forward Voltage
410mV
Max Reverse Voltage (DC)
70V
Average Rectified Current
200mA
Reverse Recovery Time
5 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
70V
Peak Non-Repetitive Surge Current
600mA
Diode Configuration
1 Pair Common Anode
Recovery Time
5 ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BAS70-06-V-GS18 Product Details
BAS70-06-V-GS18 Overview
In operation, this device will be set to 410mV volts forward.0.2A is the maximum output voltage array can support.Array should be a rule to monArrayor the surge current and not allow Array to exceed 600mA.This device will operate when the forward voltage is set to 200mA.There is a reverse voltage peak of 100nA on devices like this one.This semiconductor device's maximal reverse leakage current is 100nA kA, which is its reverse leakage current when reverse biased.Due to its primary action, this electronic or electrical device produces 200mW of heat (energy loss).
BAS70-06-V-GS18 Features
410mV forward voltage a maximum output voltage of 0.2A a peak voltage of 100nA a reverse voltage peak of 100nA
BAS70-06-V-GS18 Applications
There are a lot of Vishay Semiconductor Diodes Division BAS70-06-V-GS18 applications of rectifier diode array.