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BYG10J-E3/TR3

BYG10J-E3/TR3

BYG10J-E3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

SOT-23

BYG10J-E3/TR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Number of Pins 2
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BYG10J
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Avalanche
Current - Reverse Leakage @ Vr 1μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 1.5A
Forward Current 1.5A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 30A
Application GENERAL PURPOSE
Forward Voltage 1.15V
Max Reverse Voltage (DC) 600V
Average Rectified Current 1.5A
Number of Phases 1
Reverse Recovery Time 4 μs
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 30A
Reverse Voltage 600V
Recovery Time 4 μs
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
7,500 $0.11089 $0.77623

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