BYG10M-E3/TR

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BYG10M-E3/TR

Manufacturer part number:BYG10M-E3/TR

Manufacturer:Vishay Semiconductor Diodes Division

Description:BYG10M-E3/TR datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:BYG10M-E3/TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	BYG10M
Pin Count	2
Number of Elements	1
Voltage	1kV
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Current	15A
Diode Type	Avalanche
Current - Reverse Leakage @ Vr	1μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.15V @ 1.5A
Forward Current	1.5A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	30A
Application	GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max)	1000V
Forward Voltage	1.15V
Max Reverse Voltage (DC)	1kV
Average Rectified Current	1.5A
Number of Phases	1
Reverse Recovery Time	4 μs
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	1kV
Peak Non-Repetitive Surge Current	30A
Reverse Voltage	1kV
Max Forward Surge Current (Ifsm)	30A
Recovery Time	4 μs
Max Junction Temperature (Tj)	150°C
Height	2.29mm
Length	4.5mm
Width	2.79mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free