BYT51M-TAP

new-10%

Manufacturer part number:BYT51M-TAP

Manufacturer:Vishay Semiconductor Diodes Division

Description:Diode Switching 1KV 1.5A 2-Pin SOD-57 Ammo

Case Package:SOT-23

Datasheet:BYT51M-TAP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	SOD-57, Axial
Diode Element Material	SILICON
Packaging	Tape & Box (TB)
Published	2012
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Silver (Sn96.5Ag3.5)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Subcategory	Rectifier Diodes
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Current Rating	1.5A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	E-LALF-W2
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Avalanche
Current - Reverse Leakage @ Vr	1μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Case Connection	ISOLATED
Forward Current	1.5A
Operating Temperature - Junction	-55°C~175°C
Max Surge Current	50A
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	1000V
Forward Voltage	1.1V
Max Reverse Voltage (DC)	1kV
Average Rectified Current	1.5A
Reverse Recovery Time	4 μs
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	1kV
Peak Non-Repetitive Surge Current	50A
Reverse Voltage	1kV
Recovery Time	4 μs
Radiation Hardening	No
RoHS Status	ROHS3 Compliant