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BYW29-200HE3/45

BYW29-200HE3/45

BYW29-200HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

SOT-23

BYW29-200HE3/45 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2
Diode Element Material SILICON
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Technology SCHOTTKY
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number BYW29-200
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 20A
Case Connection CATHODE
Forward Current 8A
Operating Temperature - Junction -65°C~150°C
Max Surge Current 100A
Output Current-Max 8A
Application EFFICIENCY
Max Reverse Voltage (DC) 200V
Average Rectified Current 8A
Number of Phases 1
Reverse Recovery Time 25 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Capacitance @ Vr, F 45pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 100A
Reverse Voltage 200V
Recovery Time 25 ns
RoHS Status ROHS3 Compliant

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