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BZD17C10P-E3-18

  • BZD17C10P-E3-18
  • BZD17C10P-E3-18

BZD17C10P-E3-18

BZD17C10P-E3-18

Vishay Semiconductor Diodes Division

10V 1μA @ 7.5V -55°C~150°C 800mW DO-219AB

SOT-23

BZD17C10P-E3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-219AB
Number of Pins 2
Supplier Device Package DO-219AB (SMF)
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 800mW
Impedance 4Ohm
Element Configuration Single
Current - Reverse Leakage @ Vr 1μA @ 7.5V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Max Reverse Leakage Current 1μA
Test Current 50mA
Voltage - Zener (Nom) (Vz) 10V
Zener Voltage 10V
ESD Protection No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50,000 $0.13560 $6.78
BZD17C10P-E3-18 Product Details

BZD17C10P-E3-18 Overview


The reverse leakage current for this electrical device should be 1μA @ 7.5V.A maximum reverse leakage current of 1μA is observed.While operating, the maximum voltage - Zener (Nom) is reduced to 10VV.For its operation, maximum voltage - Forward (Vf) 1.2V @ 200mA is provided.

BZD17C10P-E3-18 Features


reverse leakage current of 1μA @ 7.5V
1μA @ 7.5V is the maximum voltage (Tol)
Reverse leakage current reaches 1μA


BZD17C10P-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZD17C10P-E3-18 applications of zener single diodes.


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