BZD17C11P-E3-08

join

new-10%

Manufacturer part number:BZD17C11P-E3-08

Manufacturer:Vishay Semiconductor Diodes Division

Description:11V 4μA @ 8.2V -55°C~150°C 800mW DO-219AB

Case Package:SOT-23

Datasheet:BZD17C11P-E3-08 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-219AB
Number of Pins	2
Supplier Device Package	DO-219AB (SMF)
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	800mW
Impedance	7Ohm
Element Configuration	Single
Current - Reverse Leakage @ Vr	4μA @ 8.2V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 200mA
Power - Max	800mW
Max Reverse Leakage Current	4μA
Test Current	50mA
Voltage - Zener (Nom) (Vz)	11V
Zener Voltage	11V
ESD Protection	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
30,000	$0.11890	$3.567

BZD17C11P-E3-08 Overview

This electrical device requires reverse leakage current of 4μA @ 8.2V.Reverse leakage current reaches 4μA at its maximum.The maximum voltage - Zener (Nom) is reduced to 11V during operation.Zener single diode reaches 1.2V @ 200mA when Zener single diode is supplied wZener single diodeh the maximum voltage - Forward (Vf).