BZD17C3V9P-E3-18

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Manufacturer part number:BZD17C3V9P-E3-18

Manufacturer:Vishay Semiconductor Diodes Division

Description:3.9V 50μA @ 1V -55°C~150°C 800mW DO-219AB

Case Package:SOT-23

Datasheet:BZD17C3V9P-E3-18 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-219AB
Number of Pins	2
Supplier Device Package	DO-219AB (SMF)
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	800mW
Impedance	8Ohm
Element Configuration	Single
Current - Reverse Leakage @ Vr	50μA @ 1V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 200mA
Power - Max	800mW
Max Reverse Leakage Current	50μA
Test Current	100mA
Voltage - Zener (Nom) (Vz)	3.9V
Zener Voltage	3.9V
ESD Protection	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
50,000	$0.11475	$5.7375

BZD17C3V9P-E3-18 Overview

An electrical device like this requires a reverse leakage current of 50μA @ 1V.During reverse leakage, the maximum current reaches 50μA.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 3.9V.For operation, diode reaches 1.2V @ 200mA at the maximum voltage - Forward (Vf).