BZD17C51P-E3-08

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Manufacturer part number:BZD17C51P-E3-08

Manufacturer:Vishay Semiconductor Diodes Division

Description:51V 1μA @ 39V -55°C~150°C 800mW DO-219AB

Case Package:SOT-23

Datasheet:BZD17C51P-E3-08 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-219AB
Number of Pins	2
Supplier Device Package	DO-219AB (SMF)
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	800mW
Impedance	60Ohm
Element Configuration	Single
Current - Reverse Leakage @ Vr	1μA @ 39V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 200mA
Power - Max	800mW
Max Reverse Leakage Current	1μA
Test Current	10mA
Voltage - Zener (Nom) (Vz)	51V
Zener Voltage	51V
ESD Protection	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZD17C51P-E3-08 Overview

The reverse leakage current for this electrical device is 1μA @ 39V.Reverse leakage currents can reach 1μA.In the course of operation, Zener (Nom) drops to zero voltage.This value reaches 1.2V @ 200mA when the maximum Forward voltage (Vf) is applied.