BZD17C56P-E3-18

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Manufacturer part number:BZD17C56P-E3-18

Manufacturer:Vishay Semiconductor Diodes Division

Description:56V 1μA @ 43V -55°C~150°C 800mW DO-219AB

Case Package:SOT-23

Datasheet:BZD17C56P-E3-18 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-219AB
Supplier Device Package	DO-219AB (SMF)
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	800mW
Current - Reverse Leakage @ Vr	1μA @ 43V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 200mA
Power - Max	800mW
Voltage - Zener (Nom) (Vz)	56V
Zener Voltage	56V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZD17C56P-E3-18 Overview

An electrical device such as this requires reverse leakage current of 1μA @ 43V.During operation, the maximum voltage - Zener (Nom) is reduced to 56V volts.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 1.2V @ 200mA V.