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BZD27B82P-M3-18

BZD27B82P-M3-18

BZD27B82P-M3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 100Ohm 1μA @ 62V -65°C~175°C 2 Terminations DO-219AB

SOT-23

BZD27B82P-M3-18 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case DO-219AB
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, BZD27B-M
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.8W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 1μA @ 62V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Impedance-Max 100Ohm
Reference Voltage 82V
Voltage - Zener (Nom) (Vz) 82V
Voltage Tol-Max 2%
Working Test Current 10mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50,000 $0.08960 $4.48
BZD27B82P-M3-18 Product Details

BZD27B82P-M3-18 Overview


The reverse leakage current for this electrical device should be 1μA @ 62V.2% indicates the maximum possible voltage (Tol) of 2%.While operating, the maximum voltage - Zener (Nom) is reduced to 82VV.This device should be operated at 10mA on the working test voltage.For its operation, maximum voltage - Forward (Vf) 1.2V @ 200mA is provided.

BZD27B82P-M3-18 Features


reverse leakage current of 1μA @ 62V
1μA @ 62V is the maximum voltage (Tol)
the working test voltage to 10mA
minimal dynamic impedance is 10mA


BZD27B82P-M3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZD27B82P-M3-18 applications of zener single diodes.


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