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BZD27C75P-HE3-18

BZD27C75P-HE3-18

BZD27C75P-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 100Ohm 75V 1μA @ 56V -65°C~175°C 800mW 2 Terminations DO-219AB

SOT-23

BZD27C75P-HE3-18 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-219AB
Weight 15mg
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, BZD27C
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 800mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 2
JESD-30 Code R-PDSO-F2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance 100Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 1μA @ 56V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Impedance-Max 100Ohm
Reference Voltage 75V
Breakdown Voltage 75V
Zener Voltage 75V
Voltage Tol-Max 6.04%
Working Test Current 10mA
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
50,000 $0.12575 $6.2875
BZD27C75P-HE3-18 Product Details

BZD27C75P-HE3-18 Overview


An electrical device like this requires a reverse leakage current of 1μA @ 56V.A maximum voltage (Tol) can be supplied if 6.04% is set.This device must be operated with the working test voltage set to 10mA.For operation, diode reaches 1.2V @ 200mA at the maximum voltage - Forward (Vf).

BZD27C75P-HE3-18 Features


reverse leakage current of 1μA @ 56V
1μA @ 56V is the maximum voltage (Tol)
the working test voltage to 10mA
minimal dynamic impedance is 10mA


BZD27C75P-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZD27C75P-HE3-18 applications of zener single diodes.


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