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BZT52B10-G3-08

BZT52B10-G3-08

BZT52B10-G3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 5.2Ohm ±2% 10V 100nA @ 7.5V -65°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B10-G3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Diode Element Material SILICON
Operating Temperature -65°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance 5.2Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 7.5V
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 5.2Ohm
Reference Voltage 10V
Zener Voltage 10V
Voltage Tol-Max 2%
Working Test Current 5mA
Voltage Tolerance 2%
Zener Current 33mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
15,000 $0.04556 $0.6834
BZT52B10-G3-08 Product Details

BZT52B10-G3-08 Overview


A reverse leakage current of 100nA @ 7.5V is required to supply this electrical device.Voltage (Tol) is limited to 2%.100nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 33mA.To operate this device, set the working test voltage to 5mA.

BZT52B10-G3-08 Features


reverse leakage current of 100nA @ 7.5V
100nA @ 7.5V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 33mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B10-G3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B10-G3-08 applications of zener single diodes.


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