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BZT52B15-E3-08

BZT52B15-E3-08

BZT52B15-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 11Ohm ±2% 15V 100nA @ 11V -65°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B15-E3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 11Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 11V
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 11Ohm
Test Current 5mA
Reference Voltage 15V
Zener Voltage 15V
Voltage Tol-Max 2%
Voltage Tolerance 2%
ESD Protection Yes
Zener Current 23mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.039283 $0.039283
10 $0.037059 $0.37059
100 $0.034961 $3.4961
500 $0.032982 $16.491
1000 $0.031116 $31.116
BZT52B15-E3-08 Product Details

BZT52B15-E3-08 Overview


A reverse leakage current of 100nA @ 11V is required to supply this electrical device.Voltage (Tol) is limited to 2%.100nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 23mA.

BZT52B15-E3-08 Features


reverse leakage current of 100nA @ 11V
100nA @ 11V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 23mA


BZT52B15-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B15-E3-08 applications of zener single diodes.


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