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BZT52B3V3-E3-18

BZT52B3V3-E3-18

BZT52B3V3-E3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 3.3V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B3V3-E3-18 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2017
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 80Ohm
Element Configuration Single
Diode Type ZENER DIODE
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Reference Voltage 3.3V
Zener Voltage 3.3V
Voltage Tol-Max 2.12%
Working Test Current 5mA
Voltage Tolerance 2%
Zener Current 109mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
BZT52B3V3-E3-18 Product Details

BZT52B3V3-E3-18 Overview


Voltage (Tol) 2.12% is the maximum possible.Reverse leakage currents can reach 100nA.In terms of design, diode has a high degree of flexibildiodey thanks to diodes 109mA zener current.This device should be operated with a 5mA working test voltage.

BZT52B3V3-E3-18 Features


Reverse leakage current reaches 100nA
the zener current of 109mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B3V3-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B3V3-E3-18 applications of zener single diodes.


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