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BZT52B3V9-HE3-18

BZT52B3V9-HE3-18

BZT52B3V9-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 3.9V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B3V9-HE3-18 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 80Ohm
Element Configuration Single
Diode Type ZENER DIODE
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Reference Voltage 3.9V
Zener Voltage 3.9V
Voltage Tol-Max 2.05%
Working Test Current 5mA
Voltage Tolerance 2%
Zener Current 92mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04284 $0.4284
BZT52B3V9-HE3-18 Product Details

BZT52B3V9-HE3-18 Overview


A voltage of 2.05% indicates the maximum voltage (Tol) that can be supplied.Reverse leakage current reaches a maximum of 100nA.The design flexibility of this device is extremely high since its zener current is 92mA.This device can only be operated when the working test voltage is set to 5mA.

BZT52B3V9-HE3-18 Features


Reverse leakage current reaches 100nA
the zener current of 92mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B3V9-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B3V9-HE3-18 applications of zener single diodes.


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