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BZT52B43-HE3-08

BZT52B43-HE3-08

BZT52B43-HE3-08

Vishay Semiconductor Diodes Division

60Ohms ±2% 43V 100nA @ 32V -55°C~150°C 410mW SOD-123

SOT-23

BZT52B43-HE3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 410mW
Impedance 60Ohm
Current - Reverse Leakage @ Vr 100nA @ 32V
Power Dissipation 500mW
Power - Max 410mW
Max Reverse Leakage Current 100nA
Impedance-Max 60Ohms
Voltage - Zener (Nom) (Vz) 43V
Zener Voltage 43V
Voltage Tolerance 2%
Zener Current 7mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
15,000 $0.04114 $0.6171
BZT52B43-HE3-08 Product Details

BZT52B43-HE3-08 Overview


An electrical device like this requires a reverse leakage current of 100nA @ 32V.During reverse leakage, the maximum current reaches 100nA.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 43V.Design flexibility is enhanced by its zener current of 7mA.

BZT52B43-HE3-08 Features


reverse leakage current of 100nA @ 32V
100nA @ 32V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 7mA


BZT52B43-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B43-HE3-08 applications of zener single diodes.


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