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BZT52B5V6-E3-18

BZT52B5V6-E3-18

BZT52B5V6-E3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 10Ohm ±2% 5.6V 100nA @ 1V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B5V6-E3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 10Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 1V
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 10Ohm
Test Current 5mA
Reference Voltage 5.6V
Zener Voltage 5.6V
Voltage Tol-Max 1.96%
Voltage Tolerance 2%
ESD Protection Yes
Zener Current 59mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04439 $0.4439
BZT52B5V6-E3-18 Product Details

BZT52B5V6-E3-18 Overview


An electrical device such as this requires reverse leakage current of 100nA @ 1V.A voltage of 1.96% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 100nA.Design-wise, diode is highly flexible, wdiodeh a zener current of 59mA.

BZT52B5V6-E3-18 Features


reverse leakage current of 100nA @ 1V
100nA @ 1V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 59mA


BZT52B5V6-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B5V6-E3-18 applications of zener single diodes.


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