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BZT52B6V8-E3-08

  • BZT52B6V8-E3-08
  • BZT52B6V8-E3-08

BZT52B6V8-E3-08

BZT52B6V8-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 4.5Ohm ±2% 6.8V 100nA @ 3V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B6V8-E3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance 4.5Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 3V
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 4.5Ohm
Reference Voltage 6.8V
Zener Voltage 6.8V
Voltage Tol-Max 2.06%
Working Test Current 5mA
Voltage Tolerance 2%
Zener Current 49mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.33000 $0.33
500 $0.3267 $163.35
1000 $0.3234 $323.4
1500 $0.3201 $480.15
2000 $0.3168 $633.6
2500 $0.3135 $783.75
BZT52B6V8-E3-08 Product Details

BZT52B6V8-E3-08 Overview


The reverse leakage current for this electrical device is 100nA @ 3V.Voltage (Tol) 2.06% is the maximum possible.Reverse leakage currents can reach 100nA.In terms of design, diode has a high degree of flexibildiodey thanks to diodes 49mA zener current.This device should be operated with a 5mA working test voltage.

BZT52B6V8-E3-08 Features


reverse leakage current of 100nA @ 3V
100nA @ 3V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 49mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B6V8-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B6V8-E3-08 applications of zener single diodes.


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