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BZT52B6V8-HE3-18

  • BZT52B6V8-HE3-18
  • BZT52B6V8-HE3-18

BZT52B6V8-HE3-18

BZT52B6V8-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 4.5Ohm ±2% 6.8V 100nA @ 3V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B6V8-HE3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance 4.5Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 3V
Power Dissipation 500mW
Max Reverse Leakage Current 100nA
Impedance-Max 4.5Ohm
Reference Voltage 6.8V
Zener Voltage 6.8V
Voltage Tol-Max 2.06%
Working Test Current 5mA
Voltage Tolerance 2%
Zener Current 49mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04114 $0.4114
BZT52B6V8-HE3-18 Product Details

BZT52B6V8-HE3-18 Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 3V is required.This value (Tol) represents the maximum voltage that can be supplied.A reverse leakage current that reaches 100nA is the maximum.As it has a zener current of 49mA, it has a tremendous amount of design flexibility.This device should be operated with 5mA as the working test voltage.

BZT52B6V8-HE3-18 Features


reverse leakage current of 100nA @ 3V
100nA @ 3V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 49mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B6V8-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B6V8-HE3-18 applications of zener single diodes.


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