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BZT52C13-E3-18

  • BZT52C13-E3-18
  • BZT52C13-E3-18

BZT52C13-E3-18

BZT52C13-E3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 9Ohm ±5% 13V 100nA @ 10V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C13-E3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 9Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 10V
Power Dissipation 410mW
Max Reverse Leakage Current 100nA
Impedance-Max 9Ohm
Reference Voltage 13V
Zener Voltage 13V
Voltage Tolerance 5%
Zener Current 25mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
BZT52C13-E3-18 Product Details

BZT52C13-E3-18 Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 10V is required.A reverse leakage current that reaches 100nA is the maximum.As it has a zener current of 25mA, it has a tremendous amount of design flexibility.

BZT52C13-E3-18 Features


reverse leakage current of 100nA @ 10V
100nA @ 10V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 25mA


BZT52C13-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C13-E3-18 applications of zener single diodes.


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