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BZT52C30-G3-18

BZT52C30-G3-18

BZT52C30-G3-18

Vishay Semiconductor Diodes Division

35Ohms ±5% 30V 100nA @ 22.5V -55°C~150°C 410mW SOD-123

SOT-23

BZT52C30-G3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Weight 10.290877mg
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 410mW
Impedance 35Ohm
Element Configuration Single
Current - Reverse Leakage @ Vr 100nA @ 22.5V
Power Dissipation 410mW
Power - Max 410mW
Max Reverse Leakage Current 100nA
Impedance-Max 35Ohms
Voltage - Zener (Nom) (Vz) 30V
Zener Voltage 30V
Voltage Tolerance 5%
Zener Current 10mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZT52C30-G3-18 Product Details

BZT52C30-G3-18 Overview


To supply this electrical device, reverse leakage current of 100nA @ 22.5V is required.There is a maximum reverse leakage current that reaches 100nA.Zener single diode is important to note that during operation, the maximum voltage - Zener (Nom) is reduced to 30V.Wdiodeh a zener current of 10mA, diode is highly flexible in terms of design.

BZT52C30-G3-18 Features


reverse leakage current of 100nA @ 22.5V
100nA @ 22.5V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 10mA


BZT52C30-G3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C30-G3-18 applications of zener single diodes.


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