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BZT52C56-E3-08

BZT52C56-E3-08

BZT52C56-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 135Ohm ±5% 56V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C56-E3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 410mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 135Ohm
Element Configuration Single
Diode Type ZENER DIODE
Power Dissipation 410mW
Max Reverse Leakage Current 100nA
Impedance-Max 135Ohm
Reference Voltage 56V
Zener Voltage 56V
Voltage Tol-Max 7.14%
Working Test Current 2.5mA
Voltage Tolerance 5%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
15,000 $0.03860 $0.579
BZT52C56-E3-08 Product Details

BZT52C56-E3-08 Overview


A voltage of 7.14% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 100nA.Setting the working test voltage to 2.5mA is required to operate this device.

BZT52C56-E3-08 Features


Reverse leakage current reaches 100nA
the working test voltage to 2.5mA
minimal dynamic impedance is 2.5mA


BZT52C56-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C56-E3-08 applications of zener single diodes.


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