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BZT55A6V8-GS08

BZT55A6V8-GS08

BZT55A6V8-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE 8Ohm ±1% 6.8V 100nA @ 3V 175°C 500mW 2 Terminations DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55A6V8-GS08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Diode Element Material SILICON
Operating Temperature 175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±1%
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW NOISE
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Reach Compliance Code unknown
Pin Count 2
JESD-30 Code O-LELF-R2
Qualification Status Not Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance 8Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 3V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Impedance-Max 8Ohm
Reference Voltage 6.8V
Voltage - Zener (Nom) (Vz) 6.8V
Zener Voltage 6.8V
Voltage Tol-Max 1%
Working Test Current 5mA
RoHS Status ROHS3 Compliant
BZT55A6V8-GS08 Product Details

BZT55A6V8-GS08 Overview


The reverse leakage current for this electrical device is 100nA @ 3V.Voltage (Tol) 1% is the maximum possible.In the course of operation, Zener (Nom) drops to zero voltage.This device should be operated with a 5mA working test voltage.This value reaches 1.5V @ 200mA when the maximum Forward voltage (Vf) is applied.

BZT55A6V8-GS08 Features


reverse leakage current of 100nA @ 3V
100nA @ 3V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT55A6V8-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT55A6V8-GS08 applications of zener single diodes.


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