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BZT55B9V1-GS08

BZT55B9V1-GS08

BZT55B9V1-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE 10Ohm ±2% 9.1V 100nA @ 6.8V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

BZT55B9V1-GS08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN SILVER
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 260
Pin Count 2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 10Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 6.8V
Power Dissipation 500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 100nA
Impedance-Max 10Ohm
Test Current 5mA
Reference Voltage 9.1V
Zener Voltage 9.1V
Voltage Tol-Max 2%
Voltage Tolerance 2%
ESD Protection No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
12,500 $0.03860 $0.4632
BZT55B9V1-GS08 Product Details

BZT55B9V1-GS08 Overview


To supply this electrical device, reverse leakage current of 100nA @ 6.8V is required.2% is the maximum voltage (Tol) that can be supplied.There is a maximum reverse leakage current that reaches 100nA.When the maximum voltage - Forward (Vf) is supplied for its operation, it reaches 1.5V @ 200mA.

BZT55B9V1-GS08 Features


reverse leakage current of 100nA @ 6.8V
100nA @ 6.8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZT55B9V1-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT55B9V1-GS08 applications of zener single diodes.


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