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BZX384B13-HE3-08

BZX384B13-HE3-08

BZX384B13-HE3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 30Ohm ±2% 13V 100nA @ 8V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

BZX384B13-HE3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2
Weight 4.309128mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
Reference Standard AEC-Q101
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 30Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation 200mW
Max Reverse Leakage Current 100nA
Impedance-Max 30Ohm
Reference Voltage 13V
Zener Voltage 13V
Voltage Tol-Max 2%
Working Test Current 5mA
Voltage Tolerance 2%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
15,000 $0.04053 $0.60795
BZX384B13-HE3-08 Product Details

BZX384B13-HE3-08 Overview


The reverse leakage current for this electrical device should be 100nA @ 8V.2% indicates the maximum possible voltage (Tol) of 2%.A maximum reverse leakage current of 100nA is observed.This device should be operated at 5mA on the working test voltage.

BZX384B13-HE3-08 Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZX384B13-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX384B13-HE3-08 applications of zener single diodes.


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