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BZX384B27-G3-18

BZX384B27-G3-18

BZX384B27-G3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 27V 50nA @ 18.9V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

BZX384B27-G3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 3.997283mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2017
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 80Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 18.9V
Power Dissipation 200mW
Max Reverse Leakage Current 50nA
Impedance-Max 80Ohm
Reference Voltage 27V
Zener Voltage 27V
Voltage Tol-Max 2%
Working Test Current 2mA
Voltage Tolerance 2%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04199 $0.4199
BZX384B27-G3-18 Product Details

BZX384B27-G3-18 Overview


The reverse leakage current for this electrical device should be 50nA @ 18.9V.2% indicates the maximum possible voltage (Tol) of 2%.A maximum reverse leakage current of 50nA is observed.This device should be operated at 2mA on the working test voltage.

BZX384B27-G3-18 Features


reverse leakage current of 50nA @ 18.9V
50nA @ 18.9V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 2mA
minimal dynamic impedance is 2mA


BZX384B27-G3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX384B27-G3-18 applications of zener single diodes.


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