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BZX84B11-G3-08

BZX84B11-G3-08

BZX84B11-G3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 20Ohm ±2% 11V 100nA @ 8V -55°C~150°C 300mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84B11-G3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 20Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation 300mW
Max Reverse Leakage Current 100nA
Impedance-Max 20Ohm
Reference Voltage 11V
Zener Voltage 11V
Voltage Tol-Max 2%
Working Test Current 5mA
Voltage Tolerance 2%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
15,000 $0.03672 $0.5508
BZX84B11-G3-08 Product Details

BZX84B11-G3-08 Overview


This electrical device requires reverse leakage current of 100nA @ 8V.Tol is the maximum voltage that can be supplied (2%).Reverse leakage current reaches 100nA at its maximum.Working test voltage should be set to 5mA for this device to operate.

BZX84B11-G3-08 Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZX84B11-G3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX84B11-G3-08 applications of zener single diodes.


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