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BZX84B30-HE3-18

BZX84B30-HE3-18

BZX84B30-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 30V 50nA @ 21V -55°C~150°C 300mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84B30-HE3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 8.788352mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 80Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 21V
Power Dissipation 300mW
Max Reverse Leakage Current 50nA
Impedance-Max 80Ohm
Reference Voltage 30V
Zener Voltage 30V
Voltage Tol-Max 2%
Working Test Current 2mA
Voltage Tolerance 2%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03213 $0.3213
BZX84B30-HE3-18 Product Details

BZX84B30-HE3-18 Overview


This electrical device requires reverse leakage current of 50nA @ 21V.Tol is the maximum voltage that can be supplied (2%).Reverse leakage current reaches 50nA at its maximum.Working test voltage should be set to 2mA for this device to operate.

BZX84B30-HE3-18 Features


reverse leakage current of 50nA @ 21V
50nA @ 21V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 2mA
minimal dynamic impedance is 2mA


BZX84B30-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX84B30-HE3-18 applications of zener single diodes.


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